Abstract
Nitrogen implantation has been performed to promote the group-III intermixing in InAs quantum dots embedded in InAlGaAs quatum-well laser structure. A differential bandgap shift as large as 112 nm (65 meV) has been observed after nitrogen implantation at 5x10(12) ions/cm(2), 1500 keV and annealing at 700 C. The intermixing activation is found to occur at a lower temperature than the typical dielectric cap annealing induced intermixing technique. The implantation induced a vacancy peaks at 1.5 mu m above the active region. The point defects diffuse efficiently through the active region during subsequent annealing and induced quantum-dot intermixing with improved luminescence at a relatively low activation annealing temperature.