Abstract
Conference Title: 2018 9th International Renewable Energy Congress (IREC) Conference Start Date: 2018, March 20 Conference End Date: 2018, March 22 Conference Location: Hammamet, Tunisia In the present work, the nonequilibrium entropy production under the effect of the dual-phase-lag heat conduction model in a two-dimensional sub-100 nm metal-oxide-semiconductor field-effect transistor (MOSFET) has been investigated. A nanoscale heat source term and different boundary conditions are included and compares the simulation results with those obtained from the phonon Boltzmann transport equation (BTE) and the Fourier law. The transient Dual-phase lag (DPL) model is solved using finite-element scheme for space and semi-implicit finite-difference for time. The effect of the Knudsen number in local entropy production is investigated. Also, the difference between the equilibrium and the nonequilibrium under the effect of the dual-phase-lag heat conduction model is studied. It is shown that the entropy production cannot be described using the classical form of the equilibrium entropy production for a high Knudsen number and in transient state. It was found that transient entropy generation obtained by the DPL model exhibits an oscillatory behavior for MOSFET with internal heat generation.