Abstract
We report the fabrication of ZnO non-volatile memory thin-film transistors (NVM-TFTs) with thin poly(vinylidene fluoride/trifluoroethylene) [P(VDF-TrFE)] ferroelectric layer and thin Al2O3 buffer layers. When our memory TFT has a thin Al2O3 layer inserted between P(VDF-TrFE) and ZnO channel: 5 nm, 10 nm and 20 nm. Our NVM-TFT operates on glass substrates under low voltage write-erase (WR-ER) pulse of 20 V with high field effect mobilities of 0.6-1 cm(2)/Vs. The device with the Al2O3 layer shows much longer retention properties over 10(4) s than the other without buffer. Depending on the thickness of buffer, our NVM-TFT displays maximum memory window of similar to 20 V and also exhibits WR-ER current ratio of 4x10(2).