Novel Device Concepts for High Efficiency InGaN-Based Light-Emitting Diodes

Hongping Zhao; Guangyu Liu; Yik-Khoon Ee; Xiao-Hang Li; Hua Tong; Jing Zhang; G. S. Huang; Nelson Tansu

doi:10.1117/12.842869

Back

Conference proceeding

Novel Device Concepts for High Efficiency InGaN-Based Light-Emitting Diodes

Hongping Zhao, Guangyu Liu, Yik-Khoon Ee, Xiao-Hang Li, Hua Tong, Jing Zhang, G. S. Huang and Nelson Tansu

GALLIUM NITRIDE MATERIALS AND DEVICES V, Vol.7602(1), pp.76021G-76021G-7

Proceedings of SPIE-The International Society for Optical Engineering

01/01/2010

DOI: https://doi.org/10.1117/12.842869

Abstract

Engineering

Engineering, Electrical & Electronic

Materials Science

Materials Science, Multidisciplinary

Optics

Physical Sciences

Science & Technology

Technology

Novel staggered InGaN quantum wells (QWs) and type-II InGaN-GaNAs QWs with improved momentum matrix element lead to improved internal quantum efficiency for green-emitting light-emitting diodes (LEDs). Approaches for enhancing internal quantum efficiency, light extraction efficiency, and efficiency-droop in nitride LEDs are discussed.

Metrics

2 Record Views

Details

Title: Novel Device Concepts for High Efficiency InGaN-Based Light-Emitting Diodes
Creators - without role: Hongping Zhao - Lehigh University
Guangyu Liu - Lehigh University
Yik-Khoon Ee - Lehigh University
Xiao-Hang Li - Lehigh University
Hua Tong - Lehigh University
Jing Zhang - Lehigh University
G. S. Huang - Lehigh University
Nelson Tansu - Lehigh University
Contributors - without role: J I Chyi
Y Nanishi
H Morkoc
C W Litton
J Piprek
E Yoon
Publication Details: GALLIUM NITRIDE MATERIALS AND DEVICES V, Vol.7602(1), pp.76021G-76021G-7
Series: Proceedings of SPIE-The International Society for Optical Engineering
Publisher: Spie-Int Soc Optical Engineering
Number of pages: 7
Identifiers: 9945176008331
Academic Unit: King Abdullah University of Science & Technology
Language: English
Resource Type: Conference proceeding