Novel Growth and Device Concepts for High-Efficiency InGaN Quantum Wells Light-Emitting Diodes

Hongping Zhao; Guangyu Liu; Xiao-Hang Li; Yik-Khoon Ee; Hua Tong; Jing Zhang; G. S. Huang; Nelson Tansu; IEEE

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Novel Growth and Device Concepts for High-Efficiency InGaN Quantum Wells Light-Emitting Diodes

Hongping Zhao, Guangyu Liu, Xiao-Hang Li, Yik-Khoon Ee, Hua Tong, Jing Zhang, G. S. Huang, Nelson Tansu and IEEE

2010 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (QELS), pp.1-2

01/01/2010

Abstract

Engineering

Engineering, Electrical & Electronic

Optics

Physical Sciences

Physics

Physics, Applied

Science & Technology

Technology

The growths and characteristics of staggered InGaN quantum wells (QWs) and type-II InGaN-GaNAs QWs are presented for high-efficiency green-emitting light-emitting diodes (LEDs). Approaches for enhancing internal-quantum-efficiency, light-extraction-efficiency, and efficiency-droop in nitride LEDs are discussed. (C)2010 Optical Society of America

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Title: Novel Growth and Device Concepts for High-Efficiency InGaN Quantum Wells Light-Emitting Diodes
Creators - without role: Hongping Zhao - Lehigh University
Guangyu Liu - Lehigh University
Xiao-Hang Li - Lehigh University
Yik-Khoon Ee - Lehigh University
Hua Tong - Lehigh University
Jing Zhang - Lehigh University
G. S. Huang - Lehigh University
Nelson Tansu - Lehigh University
IEEE
Publication Details: 2010 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (QELS), pp.1-2
Publisher: IEEE
Number of pages: 2
Identifiers: 9944081508331
Academic Unit: King Abdullah University of Science & Technology
Language: English
Resource Type: Conference proceeding