Abstract
The authors numerically investigated the origin of broadband lasing from multi-stack InAs/InP quantum dash (Qdash) laser. For this a model based on multi-population carrier-photon rate equation is developed which treats each Qdash stacking layer separately. In addition, the coupling between the adjacent stacks is also accounted in the model apart from the inhomogeneous broadening due to dash size or composition fluctuation. Simulation results show that the effect of Qdash inhomogeneity on a single plane (in-plane or localized inhomogeneity) is negligible in broadening the lasing spectra compared to the inhomogeneity across the stacks that are emitting at different wavelength. Our results would help in further optimizing the wafer structure design and improve the lasing bandwidth.