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Off Current Modeling of a Tunnel Field Effect Transistor
Conference proceeding

Off Current Modeling of a Tunnel Field Effect Transistor

Md Shofiqul Islam, Kawser Ahmed, Mirza Mohammad Monzure Elahi and IEEE
2012 7TH INTERNATIONAL CONFERENCE ON ELECTRICAL AND COMPUTER ENGINEERING (ICECE), pp.814-817
01/01/2012
DOI: https://doi.org/10.1109/ICECE.2012.6471675

Abstract

Computer Science Computer Science, Hardware & Architecture Computer Science, Theory & Methods Engineering Engineering, Electrical & Electronic Science & Technology Technology
A tunnel field effect transistor (TFET) is characterized specially by its low off current and high on current to off current ratio. For a nanoscale TFET, the off current is primarily band to band tunneling current. Off current expression in TFET is derived in this paper and device simulation has been performed using SILVACO ATLAS. The analytical expression matches closely with the simulation results for different drain voltages with zero gate voltage.

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