Abstract
In2S3 thin films have been synthesized by annealing indium thin films under sulfur pressure. The indium thin films have been deposited by evaporation onto glass substrates. The sample is then introduced, with small grains of sulfur into a Pyrex tube. The latter is sealed under vacuum and then annealed for two hours at temperatures ranging from 280 degrees C to 400 degrees C in a step of 40 degrees C. This simple and economic technique allows the elaboration of In2S3 thin films crystallized in the beta structure. Optical density (O.D.) measurements were made for In2S3 thin films synthesized at different temperatures. The optical spectra show that the threshold value of optical absorption is approximately 610 nm. By increasing the synthesis temperature this threshold value moved towards higher wavelength values. The gap is around 3eV and the electrical resistivity measurements at room temperature, show that the films are highly resistive with an electric conductivity sigma around 10 (1) (Omega cm) (1). (c) 2009 Elsevier B.V. All rights reserved