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Optical and structural properties of INP nanowires grown on silicon substrate
Conference proceeding

Optical and structural properties of INP nanowires grown on silicon substrate

N Chauvin, K Naji, M H Hadj Alouane, H Khmissi, H Dumont, H Maaref, G Patriarche, C Bru-Chevallier, M Gendry, IEEE, …
2010 23rd Annual Meeting of the IEEE Photonics Society, pp.80-81
11/2010
DOI: https://doi.org/10.1109/PHOTONICS.2010.5698767

Abstract

Indium phosphide Molecular beam epitaxial growth Nanowires Needles Radiative recombination Shape Silicon
Optical and structural properties of InP nanowires grown on silicon by molecular beam epitaxy using Vapor-Liquid-Solid method with different V/III pressure ratios are presented. A high V/III ratio favors nanowires with a nearly perfect wurtzite crystal phase and a 1 ns lifetime at 14K.

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