Optical characterisation of InAs/GaAs structures grown by MBE

M Hjiri; F Hassen; H Maaref

doi:10.1016/S0921-5107(99)00248-2

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Optical characterisation of InAs/GaAs structures grown by MBE

Conference proceeding

Peer reviewed

Optical characterisation of InAs/GaAs structures grown by MBE

M Hjiri, F Hassen and H Maaref

Materials science & engineering. B, Solid-state materials for advanced technology, Vol.69-70, pp.514-518

European Materials Research Society 1999 Spring Meeting, Symposium I: Microcrystalline and Nanocrystalline Semiconductors, June 1-4, 1999, Strasbourg, France

19/01/2000

DOI: https://doi.org/10.1016/S0921-5107(99)00248-2

Abstract

Condensed matter: electronic structure, electrical, magnetic, and optical properties

Exact sciences and technology

Iii-v semiconductors

Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation

Optical properties of specific thin films

Physics

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Title: Optical characterisation of InAs/GaAs structures grown by MBE
Creators - without role: M Hjiri - University of Monastir
F Hassen - University of Monastir
H Maaref - University of Monastir
Publication Details: Materials science & engineering. B, Solid-state materials for advanced technology, Vol.69-70, pp.514-518
Conference: European Materials Research Society 1999 Spring Meeting, Symposium I: Microcrystalline and Nanocrystalline Semiconductors, June 1-4, 1999, Strasbourg, France
Publisher: Elsevier
Grant note: European Materials Research Society
Identifiers: 9937690908331
Academic Unit: King Abdulaziz University
Language: English
Resource Type: Conference proceeding