Organic field effect transistors for explosive and radiation dosimetry applications

V Ramgopal Rao; Sandeep G Surya

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Conference proceeding

Organic field effect transistors for explosive and radiation dosimetry applications

V Ramgopal Rao and Sandeep G Surya

The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Conference Proceedings, p.1

01/01/2016

Abstract

Detection

Dosimeters

Field effect transistors

Gas sensors

Ionizing radiation

Semiconductor devices

Conference Title: 2016 IEEE SENSORS Conference Start Date: 2016, Oct. 30 Conference End Date: 2016, Nov. 3 Conference Location: Orlando, FL, USA This paper presents a brief overview of an Organic field effect transistor (OFET) based sensor applications. It highlights recent progress in the field of gas sensing and ionizing radiation sensing using OFETs. Besides step-by-step improvement of conventional devices, novel materials and novel approaches for OFET based gas and radiation sensing are discussed.

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Title: Organic field effect transistors for explosive and radiation dosimetry applications
Creators - without role: V Ramgopal Rao
Sandeep G Surya
Publication Details: The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Conference Proceedings, p.1
Publisher: The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Identifiers: 9945760908331
Academic Unit: King Abdullah University of Science & Technology
Language: English
Resource Type: Conference proceeding