Abstract
Conference Title: 2015 73rd Annual Device Research Conference (DRC) Conference Start Date: 2015, June 21 Conference End Date: 2015, June 24 Conference Location: Columbus, OH, USA We report out-of-plane strain effect on silicon based flexible FinFET, with sub 20 nm wide fins and hafnium silicate based high-κ gate dielectric. Since ultra-thin inorganic solid state substrates become flexible with reduced thickness, flexing induced strain does not enhance performance. However, detrimental effects arise as the devices are subject to various out-of-plane stresses (compressive and tensile) along the channel length.