Abstract
We report the effect of Mg doping on the growth kinetics of semipolar GaN(11-22) synthesized by plasma-assisted molecular-beam epitaxy. Mg tends to segregate on the surface, inhibiting the formation of the self-regulated Ga film which is used as a surfactant for the growth of undoped and Si-doped GaN(11-22). As a result, the growth widow is reduced for Mg doped layers, and we observe a certain deterioration of the surface morphology. In spite of this difficulties, homogenous Mg incorporation is achieved and layers display p-type conductivity for Mg atomic concentration higher than 7x10(18) cm(-3). Microscopy studies show no evidence of the pyramidal defects or polarity inversion domains found in Mg-doped GaN(0001). (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim