PHOTOLUMINESCENCE AND PHOTOACOUSTIC-SPECTROSCOPY OF SI SINGLE-STEP AND MULTISTEP INGOT-ANNEALED AND WAFER-ANNEALED GAAS CRYSTALS

Conference proceeding

O KA, O Oda, S Shigetomi, T Ikari, Y Makita and A Yamada

DEFECT ENGINEERING IN SEMICONDUCTOR GROWTH, PROCESSING AND DEVICE TECHNOLOGY, Vol.262, pp.689-694

MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS

01/01/1992

Abstract

Crystallography

Materials Science

Materials Science, Multidisciplinary

Physical Sciences

Physics

Physics, Condensed Matter

Science & Technology

Technology

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Title: PHOTOLUMINESCENCE AND PHOTOACOUSTIC-SPECTROSCOPY OF SI SINGLE-STEP AND MULTISTEP INGOT-ANNEALED AND WAFER-ANNEALED GAAS CRYSTALS
Creators - without role: O KA - Cheikh Anta Diop University
O Oda - Electronic Materials and Components Research Laboratories, Nippon Mining Co. Ltd, Niizo Minami, Saitama 335, Japan
S Shigetomi - Kurume University
T Ikari - University of Miyazaki
Y Makita - Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba 305, Japan
A Yamada - Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba 305, Japan
Contributors - without role: S Ashok
J Chevallier
K Sumino
E Weber
Publication Details: DEFECT ENGINEERING IN SEMICONDUCTOR GROWTH, PROCESSING AND DEVICE TECHNOLOGY, Vol.262, pp.689-694
Series: MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS
Publisher: Materials Research Soc
Number of pages: 6
Identifiers: 9921223108331
Academic Unit: King Saud Bin Abdulaziz University for Health Sciences
Language: English
Resource Type: Conference proceeding