PL and EL features of p-type porous silicon prepared by electrochemical anodic etching

Conference proceeding

Peer reviewed

D.-A Kim, J.-H Shim, N.-H Cho and Dr. Al Mamun

Applied surface science, Vol.234(1-4), pp.256-261

The Ninth International Conference on the Formation of Semiconductor Interfaces, ICFSI-9, Madrid, ETSII, Spain, September 15-19, 2003

15/07/2004

Abstract

Condensed matter: electronic structure, electrical, magnetic, and optical properties

Condensed matter: structure, mechanical and thermal properties

Cross-disciplinary physics: materials science; rheology

Exact sciences and technology

Physics

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Title: PL and EL features of p-type porous silicon prepared by electrochemical anodic etching
Creators - without role: D.-A Kim - Inha University
J.-H Shim - Inha University
N.-H Cho - Inha University
Dr. Al Mamun - Hafr Albatin University
Publication Details: Applied surface science, Vol.234(1-4), pp.256-261
Conference: The Ninth International Conference on the Formation of Semiconductor Interfaces, ICFSI-9, Madrid, ETSII, Spain, September 15-19, 2003
Publisher: Elsevier Science
Identifiers: 9914380908331
Academic Unit: Hafr Albatin University
Language: English
Resource Type: Conference proceeding