Abstract
This paper presents a proposed low cost high efficiency solar cell structure. The main advantage of the structure is that it is etched through a p(+) silicon wafer. Highly doped silicon is considered to be low quality and impure silicon therefore the structure based on low cost starting material. In addition, the proposed structure is etched as strips through the wafer so its series resistance is very low. This result in high fill factor. Simulations for the structure are carried out using advanced TCAD tools. I - V C/C'S is presented. The open circuit voltage (V-oc), short circuit current density (J(sc)), fill factor (F.F) and conversion efficiency are calculated. The output results are compared with the high efficiency; high cost single crystalline solar cells. In addition, an important study is carried out to enhance the structure to be responded to the ultraviolet part of the solar radiation spectrum. For this study, external quantum efficiency is presented as this is the best way for measuring the structure performance for each part of the input solar radiation spectrum.