Abstract
The search for energy efficient circuital implementations of neural networks has led to the exploration of phase-change memory (PCM) devices as their synaptic element, with the advantage of compact size and compatibility with CMOS fabrication technologies. In this work, we describe a methodology that, starting from measurements performed on a set of real PCM devices, enables the training of a neural network. The core of the procedure is the creation of a computational model, sufficiently general to include the effect of unwanted nonidealities, such as the voltage dependence of the conductances and the presence of surrounding circuitry. Results show that, depending on the task at hand, a different level of accuracy is required in the PCM model applied at train-time to match the performance of a traditional, reference network. Moreover, the trained networks are robust to the perturbation of the weight values, up to 10% standard deviation, with performance losses within 3.5% for the accuracy in the classification task being considered and an increase of the regression RMS error by 0.014 in a second task. The considered perturbation is compatible with the performance of state-of-the-art PCM programming techniques.