Photoluminescence Quenching due to Relocation of Electrons in GaN/AlN Asymmetric-Coupled Quantum Wells

Guan Sun; Suvranta K. Tripathy; Yujie J. Ding; Guangyu Liu; Hongping Zhao; G. S. Huang; Nelson Tansu; Jacob B. Khurgin; IEEE

Conference proceeding

Photoluminescence Quenching due to Relocation of Electrons in GaN/AlN Asymmetric-Coupled Quantum Wells

Guan Sun, Suvranta K. Tripathy, Yujie J. Ding, Guangyu Liu, Hongping Zhao, G. S. Huang, Nelson Tansu, Jacob B. Khurgin and IEEE

2010 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (QELS), pp.1-2

01/01/2010

Abstract

Engineering

Engineering, Electrical & Electronic

Optics

Physical Sciences

Physics

Physics, Applied

Science & Technology

Technology

We have observed dramatic photoluminescence quenching caused by relocation of photogenerated electrons under large internal electric fields, inherent in GaN/AlN asymmetric-coupled quantum wells. (C)2010 Optical Society of America

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Title: Photoluminescence Quenching due to Relocation of Electrons in GaN/AlN Asymmetric-Coupled Quantum Wells
Creators - without role: Guan Sun - Lehigh University
Suvranta K. Tripathy - Lehigh University
Yujie J. Ding - Lehigh University
Guangyu Liu - Lehigh University
Hongping Zhao - Lehigh University
G. S. Huang - Lehigh University
Nelson Tansu - Lehigh University
Jacob B. Khurgin - Johns Hopkins University
IEEE
Publication Details: 2010 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (QELS), pp.1-2
Publisher: IEEE
Number of pages: 2
Grant note: 0701421 / U.S. DARPA and National Science Foundation (ECCS)
Identifiers: 9945778808331
Academic Unit: King Abdullah University of Science & Technology
Language: English
Resource Type: Conference proceeding