Abstract
Photomodulation Raman spectroscopy (PM-RS) has been employed to study the surface depletion electric field Es and to monitor the change in surface charge density in n-type GaAs, using the forbidden LO phonon scattering for low doping samples and coupled plasmon-LO phonon modes for high doping samples. In PM-RS, the photomodulating pumping beam (PB) is incident on the sample while the Raman measurements are in progress hence PM-RS can be viewed as a pump-probe technique. The photogenerated carriers partly neutralize the surface charges. Two different GaAs surfaces (011) with low and moderate doping density and (001) with high doping density were used. The total surface charge density has been obtained as a function of the PB intensity considering a constant depletion electric field for the lower doping sample of (011) surface and using the dependence of the unscreened LO phonon on the depletion width for the higher doping samples of (001) surface. The minority carrier's lifetime was also determined through dynamical measurements for the PM-RS of the low doping sample as approximate to 21 s, in a good agreement with other techniques