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Photonic AND/NAND logic gates using semiconductor microresonators
Conference proceeding

Photonic AND/NAND logic gates using semiconductor microresonators

T.A. Ibrahim, R. Grover, L.-C. Kuo, S. Kanakaraju, L.C. Calhoun, P.-T. Ho and IEEE
The 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2003. LEOS 2003, Vol.1, pp.283-284 vol.1
2003

Abstract

Logic devices Logic gates Microcavities Optical coupling Optical pumping Optical resonators Optical ring resonators Optical waveguides Probes Resonance
This study demonstrates and characterizes the performance of all-optical AND and NAND logic gates using InP and GaAs micro-racetrack resonators. Since the switching energy of the device scales down by field enhancement (FE), subpico joule switching energy is predicted, which is required to operate the logic gate at 100 GHz assuming a carrier lifetime of 10 ps and that the microresonator has a moderate FE of 4.

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