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Polar and Semipolar III-Nitrides for long wavelength intersubband devices
Conference proceeding

Polar and Semipolar III-Nitrides for long wavelength intersubband devices

E. Monroy, P. K. Kandaswamy, H. Machhadani, A. Wirthmueller, S. Sakr, L. Lahourcade, A. Das, M. Tchernycheva, P. Ruterana and F. H. Julien
QUANTUM SENSING AND NANOPHOTONIC DEVICES VII, Vol.7608(1), pp.76081G-76081G-6
Proceedings of SPIE
01/01/2010
DOI: https://doi.org/10.1117/12.847027

Abstract

Automation & Control Systems Computer Science Computer Science, Artificial Intelligence Engineering Engineering, Electrical & Electronic Nanoscience & Nanotechnology Optics Physical Sciences Science & Technology Science & Technology - Other Topics Technology
Extending the intersubband transitions in III-nitride nanostructures from near-infrared to longer wavelengths might have significant consequences for critical applications like imaging, remote sensing and mine detection. In this work, we analyze the potential of polar and semipolar AlGaN/GaN technologies for this relevant spectral range.

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