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Polarisation-dependent performance of multiple wavelength electro-absorption intensity modulator arrays on a single InGaAs/InGaAsP chip
Conference proceeding

Polarisation-dependent performance of multiple wavelength electro-absorption intensity modulator arrays on a single InGaAs/InGaAsP chip

S.L. Ng, H.S. Djie, H.S. Lim, B.S. Ooi, Y.L. Lam, Y.C. Chan, P. Dowd, V. Aimez, J. Beauvais, J. Beerens, …
LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242), Vol.1, pp.40-41 vol.1
2001
DOI: https://doi.org/10.1109/LEOS.2001.969162

Abstract

Bandwidth Chirp modulation Energy measurement Intensity modulation Lithography Photoconductivity Polarization Quantum well devices Quantum well lasers Semiconductor lasers
We report the fabrication of 10-channel electro-absorption (EA) modulator arrays using a lattice-matched InGaAs/InGaAsP MQW structure. The fabrication method is based on the combination of using gray mask lithography and a low-energy arsenic (As) ion-implantation induced disordering (IIID) process. To understand how the QWI process may affect polarisation performance, a theoretical model based on different rates of group III and group V interdiffusion has also been developed.

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