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Polarization Engineering of InGaN-Based Nanostructures for Low-Threshold Diode Lasers and High-Efficiency Light Emitting Diodes
Conference proceeding

Polarization Engineering of InGaN-Based Nanostructures for Low-Threshold Diode Lasers and High-Efficiency Light Emitting Diodes

Nelson Tansu, Hongping Zhao, Ronald A. Arif, Yik-Khoon Ee, Guangyu Liu, Xiaohang Li, G. S. Huang and IEEE
2008 IEEE PHOTONICSGLOBAL@SINGAPORE (IPGC), VOLS 1 AND 2, pp.140-142
01/01/2008

Abstract

Engineering Engineering, Electrical & Electronic Materials Science Materials Science, Multidisciplinary Nanoscience & Nanotechnology Optics Physical Sciences Science & Technology Science & Technology - Other Topics Technology
Novel InGaN-based active regions with improved momentum matrix element were investigated for achieving improved gain and radiative recombination rate. Staggered InGaN quantum wells (QWs) and type-II InGaN-GaNAs QWs demonstrated improvement in radiative recombination rate and optical gain for green spectral regime, and these active regions have the potential to be implemented for high-efficiency green light emitting diodes and lasers.

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