Abstract
Zinc Sulphide (ZnS) is a promising candidate to be an alternative buffer layer to the commonly used cadmium sulphide (CdS) in CZTS solar cells. In this study, buffer layer parameters like layer thickness and buffer layer bandgap have been investigated by Analysis of Microelectronic and Photonic Structures (AMPS-1D) to find out the higher conversion efficiency. A promising result has been achieved with an efficiency of 14.49% (with Voc = 0.81 V, Jsc = 28.85 mA/cm(2) and Fill factor = 67.5) by using ZnS as a buffer layer. It is also found that the high efficiency of CZTS absorber layer thickness is between 2 mu m and 4 mu m. From the simulation results, it is revealed that higher efficiency can be achieved for the buffer layer bandgap around 3.10 eV - 3.25 eV. This result can be explained by the practical work as the bandgap of ZnS is largely dependent on the preparation conditions and stoichiometry. In conclusion, numerous influences of buffer layer are investigated in CZTS solar cell that can lead to the fabrication of high efficiency devices.