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Pulsed Metalorganic Chemical Vapor Deposition of In-Polar and N-Polar InN Semiconductors on GaN/Sapphire for Terahertz Applications
Conference proceeding

Pulsed Metalorganic Chemical Vapor Deposition of In-Polar and N-Polar InN Semiconductors on GaN/Sapphire for Terahertz Applications

Hongping Zhao, M. Jamil, Guangyu Liu, G. S. Huang, Hua Tong, Guibao Xu, Yujie Ding, Nelson Tansu and IEEE
2009 CONFERENCE ON LASERS AND ELECTRO-OPTICS AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2009), VOLS 1-5, pp.1367-1368
01/01/2009

Abstract

Engineering Engineering, Electrical & Electronic Optics Physical Sciences Physics Physics, Applied Science & Technology Technology
Narrow bandgap (0.77eV) In- and N-polar InN semiconductors were grown by using pulsed metalorganic chemical vapor deposition. Ultrafast laser excitation on optimized In-polar InN sample resulted in terahertz radiation (0.25-2.0THz) with output power of 2.36 mu W. (C)2009 Optical Society of America

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