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Quasi-Supercontinuum Interband Lasing Characteristics of Quantum Dot Nanostructures
Conference proceeding

Quasi-Supercontinuum Interband Lasing Characteristics of Quantum Dot Nanostructures

C. L. Tan, Y. Wang, H. S. Djie and B. S. Ooi
NUSOD '08: PROCEEDINGS OF THE 8TH INTERNATIONAL CONFERENCE ON NUMERICAL SIMULATION OF OPTOELECTRONIC DEVICES, pp.103-104
International Conference on Numerical Simulation of Optoelectronic Devices
01/01/2008
DOI: https://doi.org/10.1109/NUSOD.2008.4668263

Abstract

Engineering Engineering, Electrical & Electronic Optics Physical Sciences Science & Technology Technology
We present the First analysis of wideband-stimulated emission in semiconductor quantum-dot laser. Our theoretical model reveals critical occurrence of broadband lasing when the energy spacing between quantized energy states (Delta E) is comparable to dot inhomogeneity.

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