Radiation-induced defect formation and reactivity of model TiO2 capping layers with MMA : a comparison with Ru

Conference proceeding

B. V Yakshinskiy, M. N Hedhili, S Zalkind, M Chandhok and Theodore E Madey

Proceedings of SPIE, the International Society for Optical Engineering, Vol.6921, pp.692114.1-692114.10

Emerging lithographic technologies XII (26-28 February 2008, San Jose, California, USA)

2008

Abstract

Applied sciences

Circuit properties

Design. Technologies. Operation analysis. Testing

Electric, optical and optoelectronic circuits

Electronics

Exact sciences and technology

Integrated circuits

Microelectronic fabrication (materials and surfaces technology)

Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits

Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices

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Title: Radiation-induced defect formation and reactivity of model TiO2 capping layers with MMA : a comparison with Ru
Creators - without role: B. V Yakshinskiy - Rutgers, The State University of New Jersey
M. N Hedhili - Rutgers, The State University of New Jersey
S Zalkind - Rutgers, The State University of New Jersey
M Chandhok - Intel
Theodore E Madey - Rutgers, The State University of New Jersey
Publication Details: Proceedings of SPIE, the International Society for Optical Engineering, Vol.6921, pp.692114.1-692114.10
Conference: Emerging lithographic technologies XII (26-28 February 2008, San Jose, California, USA)
Publisher: SPIE
Identifiers: 9944671508331
Academic Unit: King Abdullah University of Science & Technology
Language: English
Resource Type: Conference proceeding