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Red to near-infrared emission from InGaN/GaN quantum-disks-in-nanowires LED
Conference proceeding

Red to near-infrared emission from InGaN/GaN quantum-disks-in-nanowires LED

Tien Khee Ng, Chao Zhao, Chao Shen, Shafat Jahangir, Bilal Janjua, Ahmed Ben Slimane, Chun Hong Kang, Ahad A Syed, Jingqi Li, Ahmed Y Alyamani, …
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Conference Proceedings, p.1
01/06/2014

Abstract

  Conference Title: 2014 Conference on Lasers and Electro-Optics (CLEO) Conference Start Date: 2014, June 8 Conference End Date: 2014, June 13 Conference Location: San Jose, CA, USA The InGaN/GaN quantum-disks-in-nanowire light-emitting diode (LED) with emission centered at ~830nm, the longest emission wavelength ever reported in the InGaN/GaN system, and spectral linewidth of 290nm, has been fabricated with p-side-down on a Cu substrate.

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