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Reduction of ambipolarity in carbon nanotube field-effect transistor by non-uniform source/drain doping and increased extension length
Conference proceeding

Reduction of ambipolarity in carbon nanotube field-effect transistor by non-uniform source/drain doping and increased extension length

Zubair Ahmed, Mansun Chan and IEEE
2012 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID STATE CIRCUIT (EDSSC), pp.1-2
IEEE International Conference on Electron Devices and Solid-State Circuits
01/01/2012
DOI: https://doi.org/10.1109/EDSSC.2012.6482787

Abstract

Engineering Engineering, Electrical & Electronic Science & Technology Technology
The effect of non-degenerate doping on the ambipolarity of a conventional carbon nanotube field effect transistor (C-CNFET) is investigated in this paper together with different source/drain extension lengths. The ambipolarity ratio for C-CNFET can be reduced by eight orders of magnitude, by using reduced doping levels and increased extension lengths, at the cost of one order of magnitude reduction in on-state current.

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