Reliability study of power RF LDMOS device under thermal stress

Conference proceeding

Peer reviewed

M. A Belaid, K Ketata, K Mourgues, M Gares, M Masmoudi and J Marcon

Microelectronics journal, Vol.38(2), pp.164-170

01/02/2007

Abstract

Applied sciences

Compound structure devices

Electrical engineering. Electrical power engineering

Electronic equipment and fabrication. Passive components, printed wiring boards, connectics

Electronics

Exact sciences and technology

Power electronics, power supplies

Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices

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Title: Reliability study of power RF LDMOS device under thermal stress
Creators - without role: M. A Belaid - Université de Rouen Normandie
K Ketata - Université de Rouen Normandie
K Mourgues - Université de Rouen Normandie
M Gares - Université de Rouen Normandie
M Masmoudi - Université de Rouen Normandie
J Marcon - Université de Rouen Normandie
Publication Details: Microelectronics journal, Vol.38(2), pp.164-170
Publisher: Elsevier Science
Identifiers: 9930903508331
Academic Unit: Umm Al Qura University
Language: English
Resource Type: Conference proceeding