Residual gap surface states along variously hydrogenated silicon (111) and (100) surfaces

Conference proceeding

Peer reviewed

A Akremi, J. P Lacharme and C. A Sebenne

Surface science, Vol.377-79, pp.192-196

ECOSS-16: European Conference on Surface Science

1997

Abstract

Condensed matter: electronic structure, electrical, magnetic, and optical properties

Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures

Exact sciences and technology

Physics

Surface and interface electron states

Surface states, band structure, electron density of states

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Title: Residual gap surface states along variously hydrogenated silicon (111) and (100) surfaces
Creators - without role: A Akremi - Laboratoire de Physique des Solides, ERS 113 au CNRS, Université P. et M. Curie 4, Place Jussieu, 75252 Paris, France
J. P Lacharme - Laboratoire de Physique des Solides, ERS 113 au CNRS, Université P. et M. Curie 4, Place Jussieu, 75252 Paris, France
C. A Sebenne - Laboratoire de Physique des Solides, ERS 113 au CNRS, Université P. et M. Curie 4, Place Jussieu, 75252 Paris, France
Publication Details: Surface science, Vol.377-79, pp.192-196
Conference: ECOSS-16: European Conference on Surface Science
Publisher: Elsevier Science
Grant note: European Physical Society ; Condensed Matter Division ; Surface and Interface Section International Union for Vacuum Science, Technology and Applications IUVSTA
Identifiers: 9931395808331
Academic Unit: Umm Al Qura University
Language: English
Resource Type: Conference proceeding