Abstract
We report on a study of the fabrication of submicron silicide structures with a resistless lithography technique. Several different metals can be used as a basis for producing silicide using this method; in this work, results will be discussed for both platinum and nickel silicide. The feasibility of producing nanostructures using polycrystalline silicon as a base growth layer for metal–oxide–semiconductor, and other device applications have also been demonstrated. Threshold doses for this method for submicron lines (<50 nm) and square areas were obtained in order to establish a framework for the fabrication of more complex devices. Preliminary electrical measurements were carried out which indicate that the resistivity of the silicide is 45 μΩ cm, and that the barrier height of the silicide/(high resistivity silicon) interface is 0.56 eV.