Room Temperature InGaAs-AlAsSb Quantum Cascade Lasers Operating in 3-4 mu m Range

D. G. Revin; S. Y. Zhang; J. P. Commin; J. W. Cockburn; K. Kennedy; A. B. Krysa; M. Hopkinson; IEEE

Conference proceeding

Room Temperature InGaAs-AlAsSb Quantum Cascade Lasers Operating in 3-4 mu m Range

D. G. Revin, S. Y. Zhang, J. P. Commin, J. W. Cockburn, K. Kennedy, A. B. Krysa, M. Hopkinson and IEEE

2009 CONFERENCE ON LASERS AND ELECTRO-OPTICS AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2009), VOLS 1-5, p.844

01/01/2009

Abstract

Engineering

Engineering, Electrical & Electronic

Optics

Physical Sciences

Physics

Physics, Applied

Science & Technology

Technology

We report the first room temperature strain compensated InGaAs/AlAs(Sb)/InP quantum cascade lasers operating down to 3.15 mu m. The lasers with selective incorporation of AlAs barriers in the active regions emit hundreds of milliwatts peak optical power. (C)2009 Optical Society of America

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Title: Room Temperature InGaAs-AlAsSb Quantum Cascade Lasers Operating in 3-4 mu m Range
Creators - without role: D. G. Revin - University of Sheffield
S. Y. Zhang - University of Sheffield
J. P. Commin - University of Sheffield
J. W. Cockburn - University of Sheffield
K. Kennedy - University of Sheffield
A. B. Krysa - University of Sheffield
M. Hopkinson - University of Sheffield
IEEE
Publication Details: 2009 CONFERENCE ON LASERS AND ELECTRO-OPTICS AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2009), VOLS 1-5, p.844
Publisher: IEEE
Number of pages: 2
Identifiers: 9945796208331
Academic Unit: King Abdullah University of Science & Technology
Language: English
Resource Type: Conference proceeding