Room temperature GaAs/AlGaAs quantum cascade lasers with InGaP and InAlP waveguides

D. G. Revin; C. N. Atkins; J. P. Commin; J. W. Cockburn; Y. Qiu; T. Walther; K. Kennedy; A. B. Krysa; IEEE

doi:10.1364/CLEO_SI.2011.CTuP5

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Room temperature GaAs/AlGaAs quantum cascade lasers with InGaP and InAlP waveguides

D. G. Revin, C. N. Atkins, J. P. Commin, J. W. Cockburn, Y. Qiu, T. Walther, K. Kennedy, A. B. Krysa and IEEE

CLEO: 2011 - Laser Science to Photonic Applications, pp.1-2

05/2011

DOI: https://doi.org/10.1364/CLEO_SI.2011.CTuP5

Abstract

Gallium arsenide

Optical pulses

Optical refraction

Optical variables control

Optical waveguides

Quantum cascade lasers

Waveguide lasers

We report the development of high temperature pulsed GaAs/AlGaAs quantum cascade lasers emitting in the wavelength range of 9 μm with threshold current density as low as 4.3 kA/cm 2 at 300K.

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Title: Room temperature GaAs/AlGaAs quantum cascade lasers with InGaP and InAlP waveguides
Creators - without role: D. G. Revin - University of Sheffield
C. N. Atkins - University of Sheffield
J. P. Commin - University of Sheffield
J. W. Cockburn - University of Sheffield
Y. Qiu - Engineering and Physical Sciences Research Council
T. Walther - University of Sheffield
K. Kennedy - University of Sheffield
A. B. Krysa - University of Sheffield
IEEE
Publication Details: CLEO: 2011 - Laser Science to Photonic Applications, pp.1-2
Publisher: IEEE
Identifiers: 9944712208331
Academic Unit: King Abdullah University of Science & Technology
Language: English
Resource Type: Conference proceeding