Abstract
Data are presented for AlGaN-AlN multiple-quantum-well optically pumped lasers operating at 300K. The structures were grown by MOCVD on bulk AlN substrates and were fabricated into cleaved bars with a cavity length similar to 1mm. The epitaxial structures consist of ten 3 nm AlGaN quantum wells with 5 nm AlGaN barriers and an AlN buffer layer deposited on a (0001) AlN substrate at a growth temperature 1155 degrees C. The bars were photopumped under pulsed conditions at 300K with a 193nm excimer laser. The threshold optical pump power is 455 kW/cm(2) and laser emission is observed at 247 nm.