Abstract
In this work, we propose and simulate a novel single transistor based transmission gate. The proposed device is a double gate Schottky device employing a stack of platinum silicide and erbium silicide materials to realize metal source and drain regions. The novelty of the proposed device lies in its ability to realize both n and p type modes simultaneously, which is normally being realized by a parallel combination of NMOS and PMOS transistors in a conventional transmission gate. The proposed device is compact, has reduced number of regions, junctions and interconnects in comparison to the conventional transmission gate.