Abstract
Electronic and structural properties of the bulk monoclinic (m) phase of HfO2 are calculated using density functional theory as implemented in SIESTA code. We have considered substitutional doping of transition metals (TM) V and Cr in m-hafnia and studied electronic and magnetic properties of the resulting system. We found that TM doped systems are ferromagnetic. Also Cr doped m-hafnia exhibit half-metallic characteristics and posses Curie temperature above room temperature. Therefore TM doped m-hafnia offers the possibility of integration of CMOS with spintronic technology.