Abstract
We present the first demonstration of a III-V MOSFET heterointegrated on a large diameter Si substrate and fabricated with a VLSI compatible process flow using a high-k/metal gate, self-aligned implants and refractory Au free ohmic metal. Additionally, TXRF data shows that with the correct protocols III-V and Si devices can be processed side by side in the same Si fabrication line The L-g = 500 nm device has a excellent drive current of similar to 450 mu A/mu m and intrinsic transconductance of similar to 1000 mu S/mu m indicating that III-V VLSI integration is a serious contender for insertion at or beyond the 11 nm technology generation.