Semiconductor quantum-dot based wideband emitter for optical sensors

H.S. Djie; C.E. Dimas; B.S. Ooi; IEEE

doi:10.1109/ICSENS.2005.1597853

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Conference proceeding

Semiconductor quantum-dot based wideband emitter for optical sensors

H.S. Djie, C.E. Dimas, B.S. Ooi and IEEE

IEEE Sensors, 2005, Vol.2005, pp.3 pp-934

2005

DOI: https://doi.org/10.1109/ICSENS.2005.1597853

Abstract

Bandwidth

Biomedical optical imaging

Light sources

Optical feedback

Optical pumping

Optical sensors

Quantum dots

Stimulated emission

Superluminescent diodes

Wideband

We report a novel broadband superluminescent diode using InGaAs/GaAs self-assembled quantum-dots heterostructure. The three sections superluminescent diode consists of index-guided ridge-waveguide section (4 mum wide) butt-connected to a broad-area photon absorber (50 mum wide) to minimize optical feedback and to suppress lasing action. The fabricated device produces low ripple spectrum under continuous wave operation (20 degC) with wavelength peak at ~1210 nm. The spectral bandwidth can be tuned from 71 to 94 nm by electrically addressing the individual section of device

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Details

Title: Semiconductor quantum-dot based wideband emitter for optical sensors
Creators - without role: H.S. Djie - Lehigh University
C.E. Dimas - Lehigh University
B.S. Ooi - Lehigh University
IEEE
Publication Details: IEEE Sensors, 2005, Vol.2005, pp.3 pp-934
Publisher: IEEE
Identifiers: 9944055608331
Academic Unit: King Abdullah University of Science & Technology
Language: English
Resource Type: Conference proceeding