Abstract
Conference Title: 2018 IEEE International Conference on Electro/Information Technology (EIT) Conference Start Date: 2018, May 3 Conference End Date: 2018, May 5 Conference Location: Rochester, MI, USA In PV systems, the voltage of a PV panel is low and it needs to be increased to satisfy the inverter side requirements without increasing the cost by adding more PV panels. To reach this goal, a high gain DC-DC converter needs to be inserted between the PV panel and inverter. In this paper, a novel high gain boost converter is proposed to reach a high output voltage and overcome the associated drawbacks of conventional converter such as high duty ratio, and narrow turn-off interval. The proposed converter composed of interleaved structure connected to the input voltage and voltage multiplier connected to the output voltage to achieve high gain ratio. The system efficiency is improved by using wide bandgap (WBG) power devices, such as SiC MOSFET. SiC based devices have low ON state resistance, small conduction and switching losses compared to Si based devices. Simulation results show that a high output voltage of 800 V is achieved. Also, a high efficiency of 98.4% is attained at a high switching frequency of 300 kHz.