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Simplified manufacturable band edge metal gate solution for NMOS without a capping layer
Conference proceeding

Simplified manufacturable band edge metal gate solution for NMOS without a capping layer

H. R. Harris, H. Alshareef, H. C. Wen, S. Krishnan, K. Choi, H. Luan, D. Heh, C. S. Park, H. B. Park, M. Hussain, …
2006 INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2, pp.374-377
International Electron Devices Meeting
01/01/2006

Abstract

Engineering Engineering, Electrical & Electronic Physical Sciences Physics Physics, Condensed Matter Science & Technology Technology
We describe an NMOS band edge solution that uses a metal gate doped with Lanthanide elements to achieve work functions as low as 4.05eV The capping interlayers used in previous works are no longer necessary, and metal gate implementation became much simpler. Using this electrode, low V(th) value and high mobility suitable for high performance devices are achieved at a practical EOT Of 8 angstrom.

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