Stark effect induced by photogenerated carriers in multiple GaN/AlN asymmetric coupled quantum wells

Guan Sun; S.K. Tripathy; Y.J. Ding; Guangyu Liu; G.S. Huang; Hongping Zhao; N. Tansu; J.B. Khurgin

doi:10.1364/cleo.2009.ctuf6

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Stark effect induced by photogenerated carriers in multiple GaN/AlN asymmetric coupled quantum wells

Guan Sun, S.K. Tripathy, Y.J. Ding, Guangyu Liu, G.S. Huang, Hongping Zhao, N. Tansu and J.B. Khurgin

2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum electronics and Laser Science Conference, pp.1-2

05/2009

DOI: https://doi.org/10.1364/cleo.2009.ctuf6

Abstract

(250.5230) Photoluminescence

(250.5590) Quantum-well

and -dot devices

Charge carrier processes

Electron optics

Electrooptic modulators

Gallium nitride

Laser excitation

Optical coupling

Optical pumping

Photoluminescence

Quantum computing

Stark effect

wire

We have observed blue and red Stark shifts of two excitonic transition peaks in multiple GaN/AlN asymmetric coupled quantum wells due to increases in electric fields originating from spatial separation of photogenerated electrons and holes.

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Title: Stark effect induced by photogenerated carriers in multiple GaN/AlN asymmetric coupled quantum wells
Creators - without role: Guan Sun - Lehigh University
S.K. Tripathy - Lehigh University
Y.J. Ding - Lehigh University
Guangyu Liu - Lehigh University
G.S. Huang - Lehigh University
Hongping Zhao - Lehigh University
N. Tansu - Lehigh University
J.B. Khurgin - Johns Hopkins University
Publication Details: 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum electronics and Laser Science Conference, pp.1-2
Publisher: IEEE
Identifiers: 9945854208331
Academic Unit: King Abdullah University of Science & Technology
Language: English
Resource Type: Conference proceeding