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Strain modeling in source exhaustion regime of Carbon nanotube field effect transistor
Conference proceeding

Strain modeling in source exhaustion regime of Carbon nanotube field effect transistor

Zubair Ahmed, Mansun Chan and IEEE
2013 IEEE International Conference of Electron Devices and Solid-state Circuits, pp.1-2
06/2013
DOI: https://doi.org/10.1109/EDSSC.2013.6628235

Abstract

Analytical models CNTFET Integrated circuit modeling Numerical models source exhaustion Strain strain effect strain modeling surface potential based model
Strain incorporated surface potential based compact model for Carbon Nanotube field effect transistor (CNTFET) is presented in this paper. The model is first of its kind and confers strain phenomena by accounting for the induced change in band-gap and corresponding energy band opening near the Fermi-level of the CNTFET in source exhaustion regime.

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