Sign in
Back
Strikingly Different Behaviors of Photoluminescence Intensity and Terahertz Output Power versus Period of InGaN/GaN Quantum Wells
Conference proceeding

Strikingly Different Behaviors of Photoluminescence Intensity and Terahertz Output Power versus Period of InGaN/GaN Quantum Wells

Guan Sun, Ruolin Chen, Yujie J. Ding, Hongping Zhao, Guangyu Liu, Jing Zhang, Nelson Tansu and IEEE
2012 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), pp.1-2
Conference on Lasers and Electro-Optics
01/01/2012

Abstract

Engineering Engineering, Electrical & Electronic Optics Physical Sciences Physics Physics, Applied Science & Technology Technology
We demonstrate that as the period of multiple InGaN/GaN quantum wells is increased from 1 to 16, photoluminescence intensity exhibits strong saturation whereas output power of broadband THz pulses is scaled up superlinearly. (C) 2012 Optical Society of America

Metrics

1 Record Views

Details