Abstract
The Cr aggregation in a ferromagnetic semiconductor (Zn,Cr)Te was studied by performing precise analyses using TEM and XRD of microscopic structure of the Cr-aggregated regions formed in iodine-doped Zn1-xCrxTe films with a relatively high Cr composition x similar to 0.2. It was found that the Cr-aggregated regions are composed of Cr1-delta Te nanocrystals of the hexagonal structure and these hexagonal precipitates are stacked preferentially on the (111) A plane of the zinc-blende (ZB) structure of the host ZnTe crystal with its c-axis nearly parallel to the {111}ZB plane.