Abstract
We investigate the electronic and thermoelectric properties of GeSe bilayer. We found that GeSe bilayer is a direct band gap semiconductor with band gap equal to 0.88eV. The peak values of ZT of bilayer at 300 K and 700 K are 0.17, 0.62 along the zigzag direction and 0.35, 0.74 along the armchair direction. Further, ZT of the p-type bilayer is higher as compare to n-type bilayer which suggests that p-type doping is favorable to increase the ZT to meet the commercial demands.