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Studies on Lattice Vibration, Impurity and Defects in MIS Structures Using Hf-based Dielectrics on Si and SiGe Substrates
Conference proceeding

Studies on Lattice Vibration, Impurity and Defects in MIS Structures Using Hf-based Dielectrics on Si and SiGe Substrates

C. Mukherjee, S. Mallik, M. K. Hota, T. Das, C. K. Maiti and IEEE
2012 19TH IEEE INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA), pp.1-4
IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits
01/01/2012
DOI: https://doi.org/10.1109/IPFA.2012.6306303

Abstract

Engineering Engineering, Electrical & Electronic Science & Technology Technology
Lattice dynamics, molecular vibrations as well as defects and traps in ultra-thin Hf-based gate dielectrics on Si and strained-SiGe layers have been studied using inelastic tunneling spectroscopy (IETS). Molecular vibrations, phonons, defects and trap-features are identified from IETS of the samples for comparing and analyzing different interface qualities.

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