Abstract
GaNAs and GaInNAs growths are subjects of considerable interest due to its technological importance in long wavelength lasers emitting within the optical-fiber communication wavelength window (1.31 - 1.55 mum). We study GaNAs and GaInNAs materials growth on (100) semi-insulating GaAs Substrate with high nitrogen compositions (>2%) using a solid source molecular beam epitaxy (SSMBE) system in conjunction with a RF plasma source. GaNAs layer with high nitrogen compositions of 4.85% and 6% with good XRD peak intensities were successfully grown. GaInNAs quantum wells (QWs) were then grown with reference to the nitrogen compositions measured in the GaNAs materials to obtain nitrogen compositions >2%. The photoluminescence (PL) peak positions of the GaInNAs QWs blueshifted after annealing at 840degreesC and 10min. It was found that the blueshift of PL peaks are highly dependent on nitrogen compositions.