Study of hot-carrier effects on power RF LDMOS device reliability

Conference proceeding

Peer reviewed

M Gares, M. A Belaïd, H Maanane, M Masmoudi, J Marcon, K Mourgues and Ph Eudeline

Microelectronics and reliability, Vol.47(9-11), pp.1394-1399

18th European symposium on reliability of electron devices, failure physics and analysis

01/09/2007

Abstract

Applied sciences

Compound structure devices

Electrical engineering. Electrical power engineering

Electronic equipment and fabrication. Passive components, printed wiring boards, connectics

Electronics

Exact sciences and technology

Other multijunction devices. Power transistors. Thyristors

Power electronics, power supplies

Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices

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Title: Study of hot-carrier effects on power RF LDMOS device reliability
Creators - without role: M Gares - Université de Rouen Normandie
M. A Belaïd - Université de Rouen Normandie
H Maanane - Université de Rouen Normandie
M Masmoudi - Université de Rouen Normandie
J Marcon - Université de Rouen Normandie
K Mourgues - Université de Rouen Normandie
Ph Eudeline - Zentralinstitut für die Kassenärztliche Versorgung in der Bundesrepublik Deutschland
Publication Details: Microelectronics and reliability, Vol.47(9-11), pp.1394-1399
Conference: 18th European symposium on reliability of electron devices, failure physics and analysis
Publisher: Elsevier
Identifiers: 9931025708331
Academic Unit: Umm Al Qura University
Language: English
Resource Type: Conference proceeding