Abstract
Present work reports the Graphene oxide (GO) optical and electrical properties and its variation after graphene oxide reduction. Modified Hummers' method route is adopted for synthesis of present graphene oxide (GO) material. Graphene oxide (GO) was reduced by voltage application in the GO solution. In voltage application process the Cu electrode was dipped in the GO solution with biasing of 10 V for 2 h. The thin films of two materials graphene oxide (GO) and reduced graphene oxide (rGO) are deposited in square shape using Masking tape by spin coating technique. The materials were characterized by X-Ray Diffraction (XRD), Scanning electron microscopy (SEM) Raman spectroscopy and UV-Vis spectroscopy. The XRD peak of GO raised at 10.4 degrees and rGO at 25.9 degrees. The SEM images show the sheet structure of GO and rGO. The Raman peak of GO and rGO show G peak at 1597 cm(-1), 1608 cm(-1) and D peak at 1353 cm(-1), 1347 cm(-1) respectively. The I-D/I-G ratio of GO and rGO is 0.89 and 0.96, respectively. The peak of GO and rGO UV-Vis absorbances is 230 nm and 270 nm, transmittance is 85% and 75%. respectively. The tauc plot gave the bandgap value of GO is 3.84 eV and rGO is 2.87 eV. The measurement of sheet resistance using desktop bench multimeter of GO is 2M Omega/sq. and rGO is 1.5k Omega/sq. The calculation of Hacce figure of merit for rGO as transparent electrode gives the value 3.75 x 10(-5)Omega(-1) (C) 2019 Elsevier Ltd. All rights reserved.